| 发明名称 |
APPARATUS AND METHOD FOR DEPOSITING AN OXIDE FILM |
| 摘要 |
<p>Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800°C and 1300°C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.</p> |
| 申请公布号 |
WO2004035859(A1) |
申请公布日期 |
2004.04.29 |
| 申请号 |
WO2003US32038 |
申请日期 |
2003.10.08 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ANDERSON, ROGER, N.;COMITA, PAUL, B.;WALDHAUER, ANN;RILEY, NORMA, B. |
| 分类号 |
C23C16/40;C23C16/44;C23C16/458;C23C16/48;C23C16/52;C23C16/54;H01L21/316;H01L21/762;(IPC1-7):C23C16/40 |
主分类号 |
C23C16/40 |
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