IN-SITU CLEANING METHOD OF DEPOSITING CHAMBER

摘要

PURPOSE: An in-situ cleaning method of a depositing chamber is provided to be capable of carrying out an in-situ cleaning process without the time delay for falling and plasma power. CONSTITUTION: ClF3 gas is flowed into a ruthenium depositing chamber. At this time, the ruthenium depositing chamber is heated to a predetermined temperature. A cleaning process is completed by removing ruthenium remaining in the depositing chamber using the flowed ClF3. Preferably, the depositing chamber includes an Al heater, so that the ruthenium removing process is carried out at the temperature of 200-400 °C. Preferably, the depositing chamber is capable of including an AlN heater, so that the ruthenium removing process is carried out at the temperature of 200-600 °C.