发明名称 |
Apparatus and method for treating surfaces of semiconductor wafers using ozone |
摘要 |
An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.
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申请公布号 |
US2004079396(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030350739 |
申请日期 |
2003.01.23 |
申请人 |
JEONG IN KWON;KIM YONG BAE;KIM JUNGYUP |
发明人 |
JEONG IN KWON;KIM YONG BAE;KIM JUNGYUP |
分类号 |
B08B3/00;B08B3/02;B08B3/08;B08B3/12;B08B7/04;H01L;H01L21/00;H01L21/302;H01L21/306;H01L21/31;H01L21/316;H01L21/461;H01L21/469;(IPC1-7):B08B7/04 |
主分类号 |
B08B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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