| 摘要 |
A parallel spiral stacked inductor [100] and manufacturing method therefore is provided. A substrate [112] has a plurality of turns [124,124',126,126'] in a plurality of levels, the plurality of turns [124,124',126,126'] having a center proximate and a center distal ends. First vias [132v] connecting the center proximate ends of the plurality of turns [124,124',126,126'] and second vias [133] connecting the center distal ends of the plurality of turns [124,124',126,126']. A first connecting portion [130] connects to the center proximate ends of the plurality of turns [124,124',126,126'] and a second connecting portion [134] connecting to the center distal end of the plurality of turns [124,124',126,126']. A dielectric material [114,116,118,120] contains the inductor [122]. |
