METHOD AND SYSTEM FOR COMPENSATING FOR ANNEAL NON-UNIFORMITIES

摘要

A method and system can compensate for anneal non-uniformities by implanting dopant in a pattern to provide higher dopant concentrations where the anneal non-uniformities result in lower active dopant concentrations. A pattern for the anneal non-uniformities may be determined by annealing a wafer having a uniform dopant distribution and measuring properties of the wafer after annealing, e.g., by obtaining a sheet resistance map of the wafer. In one embodiment, the non-uniformities may be measured by measuring temperature variations during annealing.