发明名称 |
Method for forming device isolation film of semiconductor device |
摘要 |
A method for forming a device isolation film of a semiconductor device, wherein an annealing process is performed on the oxide film using NH3 prior to the deposition of a liner nitride film and after the deposition of a thermal oxide film on a sidewall of a trench to nitridate the oxide film is disclosed. The method comprises the steps of: (a) sequentially forming a pad oxide film and a pad nitride film on a semiconductor substrate; (b) selectively etching the pad nitride film to form a nitride film pattern; (c) etching the pad oxide film and a predetermined thickness of the semiconductor substrate using the nitride film pattern as a hard mask to form a trench; (d) forming a thermal oxide film on the surface of the trench; (e) performing an annealing process under NH3 atmosphere to form an oxide nitride film on the surface of the thermal oxide film; (f) forming a liner nitride film on the entire surface; (g) forming an oxide film filling the trench on the entire surface; and (h) performing a planarization process.
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申请公布号 |
US2004082144(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030600332 |
申请日期 |
2003.06.23 |
申请人 |
PARK CHEOL HWAN;PARK DONG SU;LEE TAE HYEOK;WOO SANG HO |
发明人 |
PARK CHEOL HWAN;PARK DONG SU;LEE TAE HYEOK;WOO SANG HO |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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