发明名称 |
Method and compositions for hardening photoresist in etching processes |
摘要 |
A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
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申请公布号 |
US2004079727(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20020219995 |
申请日期 |
2002.08.14 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
TAYLOR YOUSUN KIM;NGUYEN WENDY;LEE CHRIS G.N. |
分类号 |
G03F7/40;H01L21/027;H01L21/3065;H01L21/308;H01L21/311;H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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