发明名称 |
SPUTTERING TARGET MATERIAL |
摘要 |
The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.
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申请公布号 |
US2004079635(A9) |
申请公布日期 |
2004.04.29 |
申请号 |
US20020092465 |
申请日期 |
2002.03.08 |
申请人 |
HARA NORIAKI;YARITA SOMEI;HAGIWARA KEN;MATSUZAKA RITSUYA |
发明人 |
HARA NORIAKI;YARITA SOMEI;HAGIWARA KEN;MATSUZAKA RITSUYA |
分类号 |
C23C14/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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