发明名称 SPUTTERING TARGET MATERIAL
摘要 The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.
申请公布号 US2004079635(A9) 申请公布日期 2004.04.29
申请号 US20020092465 申请日期 2002.03.08
申请人 HARA NORIAKI;YARITA SOMEI;HAGIWARA KEN;MATSUZAKA RITSUYA 发明人 HARA NORIAKI;YARITA SOMEI;HAGIWARA KEN;MATSUZAKA RITSUYA
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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