| 摘要 |
PURPOSE: A PIN diode and a method for manufacturing the same are provided to be capable of reducing the leakage current through a parasitic PN diode. CONSTITUTION: A PIN diode(10) is provided with a GaAs substrate(11), a low temperature GaAs buffer layer(18) formed at the upper portion of the GaAs substrate by carrying out a molecular beam epitaxial process at a predetermined low temperature, and an N-type GaAs layer(13) formed at the upper portion of the low temperature GaAs buffer layer. The pin diode further includes I-type GaAs layer(14) formed at the predetermined upper portion of the N-type GaAs layer, a P-type GaAs layer(15) formed at the upper portion of the I-type GaAs layer, a P-type metal(16) formed on the P-type GaAs layer, and an N-type metal(17) formed on the predetermined portion of the N-type GaAs layer.
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