| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of compensating for the volume of a recess in a cleaning process for preventing the generation of moat. CONSTITUTION: A pad oxide layer(12), a pad nitride layer(14), and a screen oxide layer are sequentially formed on a semiconductor substrate(10). At this time, the semiconductor substrate is defined with an active region and an isolation region. The screen oxide layer and the pad nitride layer of the isolation region are removed. The exposed pad nitride is partially removed to the lateral direction by performing a wet etching process. A trench is formed by performing a dry etching process on the pad oxide layer and the semiconductor substrate of the isolation region using the screen oxide layer as an etching mask. A rounding oxide layer(20) is formed on the exposed semiconductor substrate by performing an oxidation process. Then, the trench is filled with an oxide layer(22), wherein the oxide layer is used as an isolation layer.
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