SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to be capable of securing the insulation characteristic of an isolation layer and simultaneously improving the degree of integration of the semiconductor device. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(102), a gate(124) formed on the semiconductor substrate, and an impurity diffusion layer(126) formed at both sides of the gate in the semiconductor substrate for being used as a source/drain. The semiconductor device further includes a trench type isolation layer(114) for electrically isolating neighboring impurity diffusion layers and a silicon growth layer(110) between the isolation layer and the semiconductor substrate. At this time, the isolation layer is made of at least one insulating layer. An ion implantation process is performed on the silicon growth layer with the same impurities as the impurity diffusion layer for obtaining a prolonged structure of the impurity diffusion region on the silicon growth layer.