发明名称 Synchronous semiconductor memory device having dynamic memory cells and operating method thereof
摘要 <p>A command decoder decodes the commands in synchronism with an external clock signal. The decoder sets the write active (WRA) command, read active (RDA) command, lower address latch (LAL) command and auto-refresh (REF) command based on the combination of the logic levels of the control pins. The decoder sets the auto-refresh command immediately after the execution of the write active command. An independent claim is also included for a method of operating a synchronous semiconductor memory device.</p>
申请公布号 EP1414045(A1) 申请公布日期 2004.04.28
申请号 EP20030003240 申请日期 2003.02.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MARUYAMA, KEIJI;OHSHIMA, SHIGEO;KAWAGUCHI, KAZUAKI
分类号 G11C11/34;G11C11/403;G11C11/406;G11C11/407;(IPC1-7):G11C11/406;G11C7/22;G11C7/10 主分类号 G11C11/34
代理机构 代理人
主权项
地址