| 摘要 |
PURPOSE: A high voltage transfer unit of a semiconductor memory device is provided to improve a speed of a DRAM by lowering the driving capacity of a PMOS transistor and increasing a high voltage transfer speed. CONSTITUTION: A high voltage transfer unit includes a driving capacity control portion(110), a high voltage transfer portion(120), a floating prevention portion(130), a voltage drop portion(140), and a driving portion(100). The driving capacity control portion is operated by a supply voltage as a source and an input signal. The high voltage transfer portion transfers the high voltage of the driving capacity control portion to an output terminal. The floating prevention portion prevents a floating phenomenon of the high voltage transfer portion. The voltage drop portion drops the voltage of the high voltage transfer portion. The driving portion enables the high voltage transfer portion.
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