METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING LANDING PADS

摘要

PURPOSE: A method for manufacturing a semiconductor device having landing pads is provided to be capable of increasing cleaning process margin for improving the contact resistance of the landing pads. CONSTITUTION: A plurality of gate patterns(60) are formed on a semiconductor substrate(51). A gate spacer(63) is formed at both sidewalls of each gate pattern. An interlayer dielectric is flatly formed on the resultant structure. A buffer layer(67) is formed on the entire surface of the resultant structure. A plurality of pad contact holes are formed by selectively patterning the buffer layer and the interlayer dielectric for partially exposing the semiconductor substrate. A contaminated material layer of the exposed semiconductor substrate is removed by using a cleaning solution. A plurality of landing pads(73d,73s',73s'') are formed in the pad contact holes, respectively.