| 摘要 |
PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) using a dual or multiple gate is provided to be capable of improving the uniformity of the TFT for a local portion of the whole substrate. CONSTITUTION: The grain size 'Gs' of polycrystalline silicon, the angle '&thgr;' between the vertical direction for the active channel direction of a gate and primary grain boundary, an active channel width, and an active channel length are decided. A probability value for containing the maximum number 'Nmax' of grain boundaries in an active channel region according to the active channel length is calculated. The interval between active channels is controlled for synchronizing the number of the grain boundaries in each active channel region of a dual or multiple gate TFT.
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