发明名称 Apparatus and method for scanning exposure
摘要 <p>The apparatus measures positions of the wafer (4) in a direction along which pattern is to be focused by a projection system. The measured positions of the wafer are corrected by calculating the offsets. The wafer is moved during scanning exposure, based on the measured positions and the calculated offsets. Independent claims are also included for the following: (1) semiconductor device fabrication method; and (2) scanning exposure method.</p>
申请公布号 EP1413928(A2) 申请公布日期 2004.04.28
申请号 EP20030078743 申请日期 1996.07.30
申请人 CANON KABUSHIKI KAISHA 发明人 YAMADA, YUICHI;UZAWA, SHIGEYUKI
分类号 G03F7/20;G03F7/207;G03F9/00;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F7/20
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