| 摘要 |
PURPOSE: An electron beam curing apparatus of a semiconductor device is provided to be capable of improving the stability of plasma and increasing the uniformity of plasma distribution. CONSTITUTION: An electron beam curing apparatus of a semiconductor device is provided with a wafer(31), a chamber for performing a curing process on the wafer, a focus ring(33) installed in the chamber for loading the wafer, a grid(35) formed at the top portion of the chamber, and a variable voltage supply part(37) for applying voltage to the grid. At this time, a porous silicon panel is used as the grid. The electron beam curing apparatus further includes an antenna coil(39), the first and second high frequency supply part(43,45) for applying high frequency to the predetermined portions of the antenna coil, a pump part(47) formed at the outer lower portion of the chamber for removing particles from the chamber and conserving a vacuum state in the chamber, and a magnetic field coil(51) formed at the outer wall of the chamber.
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