SEMICONDUCTOR DEVICE INCLUDING STORAGE NODE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device including a storage node and a manufacturing method thereof are provided to be capable of considerably securing misalignment, overlay, or process margin. CONSTITUTION: A semiconductor device is provided with the first and second contact pads(410,450) electrically connected to a semiconductor substrate through the first insulating layer and the second insulating layer(330) formed on the first insulating layer. At this time, a guide contact hole is formed at the second insulating layer for exposing the first contact pad. The semiconductor device further includes the third insulating layer(350) formed on an etch stop layer, the second contact(605) electrically connected to the second contact pad through the third insulating layer, a bit line(600) formed on the third insulating layer, and the fourth insulating layer(370) formed on the resultant structure. The semiconductor device further includes the first contact(710) spaced apart from the second contact for contacting the first contact pad, and a storage node(700) electrically connected to the first contact.