发明名称 CIRCUIT AND METHOD FOR GENERATING MRS CODE AND IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A circuit and a method for generating a MRS(Mode Register Set) code in a semiconductor memory device are provided to generate the MRS code without being restricted by a confined address. CONSTITUTION: A data input circuit(110) receives data, and outputs the inputted data in response to the first synchronous signal. A logic circuit(120) generates the second synchronous signal to latch an output signal of the data input circuit in response to the first synchronous signal. A latch circuit(130) receives the output signal of the data input circuit and latches the output signal of the data input circuit in response to the second synchronous signal. And a decoder(140) receives an output signal of the latch circuit generates a MRS code by decoding the output signal of the latch circuit. The first synchronous signal is generated in response to a signal enabling a MRS mode of the semiconductor memory device.
申请公布号 KR20040034168(A) 申请公布日期 2004.04.28
申请号 KR20020064251 申请日期 2002.10.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHEOL SU;KIM, GYU HYEON
分类号 G01R31/28;G01R31/319;G11C7/10;G11C11/40;G11C11/401;G11C11/407;G11C11/4193;G11C29/12;G11C29/14;(IPC1-7):G11C11/40 主分类号 G01R31/28
代理机构 代理人
主权项
地址