发明名称 |
CIRCUIT AND METHOD FOR GENERATING MRS CODE AND IN SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A circuit and a method for generating a MRS(Mode Register Set) code in a semiconductor memory device are provided to generate the MRS code without being restricted by a confined address. CONSTITUTION: A data input circuit(110) receives data, and outputs the inputted data in response to the first synchronous signal. A logic circuit(120) generates the second synchronous signal to latch an output signal of the data input circuit in response to the first synchronous signal. A latch circuit(130) receives the output signal of the data input circuit and latches the output signal of the data input circuit in response to the second synchronous signal. And a decoder(140) receives an output signal of the latch circuit generates a MRS code by decoding the output signal of the latch circuit. The first synchronous signal is generated in response to a signal enabling a MRS mode of the semiconductor memory device.
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申请公布号 |
KR20040034168(A) |
申请公布日期 |
2004.04.28 |
申请号 |
KR20020064251 |
申请日期 |
2002.10.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, CHEOL SU;KIM, GYU HYEON |
分类号 |
G01R31/28;G01R31/319;G11C7/10;G11C11/40;G11C11/401;G11C11/407;G11C11/4193;G11C29/12;G11C29/14;(IPC1-7):G11C11/40 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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