ISOLATING STRUCTURE FOR DEFINING DIAMOND TYPE ACTIVE REGION AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An isolation structure for defining a diamond type active region and a manufacturing method thereof are provided to be capable of minimizing the width of an isolation region for securing a large line width of the active region. CONSTITUTION: An isolation structure is provided with a plurality of trenches(105) formed on a semiconductor substrate(100) and a plurality of isolation regions(150) formed in the plurality of trenches for defining an active region into a diamond type structure. At this time, the plurality of trenches are shaped into a diamond type lattice structure. Preferably, the trench has a line width of 10-1000 angstrom and a depth of 100-10000 angstrom.