SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING OF METAL HAVING ENHANCED POLISHING ABILITY AND IMPROVED STABILITY AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A slurry composition for chemical mechanical polishing of metal having enhanced polishing ability and improved stability and a manufacturing method thereof are provided to be capable of conserving a high polishing speed and improving chemical and distributional stability. CONSTITUTION: A CMP slurry composition contains metal oxide, hydrogen peroxide solution, iron compound, imidazole based compound and deionized water. At this time, the pH of the CMP slurry composition is in the range of 2-4. Preferably, the metal oxide is made of one selected from a group consisting of silica, aluminum, ceria, and titania. Preferably, the imidazole based compound is made of one selected from a group consisting of 4-imidazole methanol, 4-imidazole ethanol, and 4-imidazole carboxyl acid. Preferably, the pH of the composition is controlled by using nitric acid or acetic acid.