发明名称 |
Three dimensional integrated circuits |
摘要 |
Semiconductor crystal grains are formed by metal-induced lateral crystallisation. The positions of the grain boundaries normal to the crystallisation direction are controlled, to position the grains correctly for subsequent formation of electronic devices within them. In a first technique, the grains are positioned by depositing the metal in short strips which each induce the crystallisation of a single corresponding grain. In a second technique, the grains are positioned by pre-patterning the amorphous silicon which is used to form the grains. Electronic circuit elements can be formed in each grain. The resultant structure can be used in a microelectronic mechanical system. Several grains can be formed successively and circuit elements formed in each layer to form a three-dimensional integrated circuit.
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申请公布号 |
US6727517(B2) |
申请公布日期 |
2004.04.27 |
申请号 |
US20010964530 |
申请日期 |
2001.09.28 |
申请人 |
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
CHAN MAN-SUN JOHN;CHAN PHILIP C. H.;CHAN WING-CHUNG VICTOR |
分类号 |
H01L21/20;H01L21/822;H01L27/06;(IPC1-7):H01L31/112 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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