| 摘要 |
A semiconductor laser which has an active layer of a lattice strain of less than 2% of a thickness mean on a GaAs substrate and can be used in a long wavelength band of 1.3 mum band or more and a photo module which uses the semiconductor laser are provided. The semiconductor laser device has a first semiconductor layer 5 and second semiconductor layers 4, the layer 5 and the layers 4 forming a type-II heterojunction structure, in which an energy of conduction band edge of said first conductor layer 5 is larger than the energy of conduction band of said second semiconductor layers 4. The device has third semiconductor layers 6 as barrier layers formed on both sides of said type-II heterojunction structure. In the device, the second semiconductor layers 4 are arranged on both sides of the first semiconductor layer 5 and the thickness of the first semiconductor layer 5 is set in such a degree of thickness that a wave function of an electron of a quantum well formed by making the second semiconductor layer well layers is coupled.
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