| 摘要 |
A semiconductor device has a semiconductor element formed on a semiconductor substrate and a first insulating film having contact holes. The semiconductor element has a gate electrode, a source region and a drain region. The semiconductor element also has metal wirings each for connecting a respective one of the contact holes to the gate electrode, the source region and the drain region of the semiconductor element. A second insulating film is formed on the first insulating film and the metal wirings. The second insulating film has a chemical-mechanical polished portion defining a flattened upper surface of the second insulating film. Resistors are formed on and are disposed directly in contact with the flattened upper surface of the second insulating film and are connected in series to form a bleeder resistor circuit or a ladder circuit.
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