发明名称 Method of crystallizing amorphous silicon
摘要 A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion that blocks a laser beam and a plurality of tier-shaped light-transmitting portions that pass a laser beam. Each light-transmitting portion has a plurality of adjacent rectangular sub-portions. Adjacent rectangular sub-portions form a step. In operation, the mask moves transversely relative to a amorphous silicon film while a laser performs SLS crystallization. The light portions control grain growth such that high quality polycrystalline silicon is formed.
申请公布号 US6726768(B2) 申请公布日期 2004.04.27
申请号 US20020134480 申请日期 2002.04.30
申请人 LG. PHILIPS LCD CO., LTD. 发明人 YOON JIN-MO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):C30B25/02;C30B25/04 主分类号 H01L21/20
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