发明名称 |
Method of crystallizing amorphous silicon |
摘要 |
A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion that blocks a laser beam and a plurality of tier-shaped light-transmitting portions that pass a laser beam. Each light-transmitting portion has a plurality of adjacent rectangular sub-portions. Adjacent rectangular sub-portions form a step. In operation, the mask moves transversely relative to a amorphous silicon film while a laser performs SLS crystallization. The light portions control grain growth such that high quality polycrystalline silicon is formed.
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申请公布号 |
US6726768(B2) |
申请公布日期 |
2004.04.27 |
申请号 |
US20020134480 |
申请日期 |
2002.04.30 |
申请人 |
LG. PHILIPS LCD CO., LTD. |
发明人 |
YOON JIN-MO |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):C30B25/02;C30B25/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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