| 摘要 |
A memory structure and the method for fabricating the same are disclosed in this present invention. A first gate structure and a second gate structure are provided onto a substrate. After an implanting process, the first gate structure will become the periphery device of an embedded memory structure, and the second gate structure will become the memory device of the embedded memory structure. A first spacer and a second spacer are fabricated on the sidewalls of the first gate structure and the second gate structure. After the formation of the contacts between the second gate structures, the second spacer on the sidewall of the second gate structure will be removed. Therefore, there is the dual spacer, including the first spacer and the second spacer, on the sidewall of the first gate structure. In the other hand, the single spacer, only the first spacer included, is left on the sidewall of the second gate structure. Therefore, this invention can fabricate the spacers in different scale based on the requirement of the semiconductor manufacture for the periphery device and the memory device. |
