| 摘要 |
In a method of designing patterns of a semiconductor integrated circuit, the shape of each of a plurality of opening patterns formed by a plurality of contact holes is formed into a rectangular shape; and the contact holes are arranged in such a manner that a long side of each of the rectangular opening patterns is opposite to a long side of an adjacent rectangular opening pattern, and the positions of both ends of the long sides are trued up. Furthermore, a photomask is used for manufacturing a semiconductor integrated circuit as designed by the above method of designing patterns of a semiconductor integrated circuit, in which a plurality of rectangular opening patterns are provided thereon as a plurality of rectangular opening patterns for contact holes; and the a plurality of rectangular opening patterns are arranged in such a manner that adjacent long sides thereof are opposite to each other, and the position of both ends of each long side is trued up. Besides, a semiconductor device comprises a semiconductor integrated circuit designed by using a method of designing a semiconductor integrated circuit. |
