| 摘要 |
An exposure apparatus comprising (a) irradiating means for illuminating a mask with laser light from an excimer laser and (b) a projection optical system for projecting a pattern of the mask onto a substrate with the laser light, wherein a characteristic of the projection optical system is measured by use of a harmonic of a predetermined laser, and wherein the laser light from the excimer laser has a wavelength corresponding to that of the harmonic of the predetermined laser.
|
