METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE USING DIFFUSION BARRIER LAYER

摘要

PURPOSE: A method of forming a metal line of a semiconductor device is provided to obtain a good diffusion barrier layer by performing repeatedly a ruthenium oxide layer forming process and a plasma treatment. CONSTITUTION: A ruthenium oxide layer as a diffusion barrier layer is deposited as much as a predetermined thickness. The ruthenium oxide layer is amorphized by performing a heat treatment. The preceding processes are repeated at least one time. The ruthenium oxide layer is deposited by using RF(Radio Frequency) power of 500 to 2000 Watt at the pressure of 0.5 to 20 mTorr.