发明名称 |
Low temperature chemical mechanical polishing of dielectric materials |
摘要 |
The present invention is an improved apparatus and process for chemical mechanical polishing layers which have a low dielectric constant (K). The present invention lowers the temperature of the material having a low dielectric constant and then polishes that material at the lower temperature. By lowering the temperature of the low K material the hardness or stiffness of the material is improved making it easier to polish and resulting in a more planar surface.
|
申请公布号 |
US6726529(B2) |
申请公布日期 |
2004.04.27 |
申请号 |
US20000505925 |
申请日期 |
2000.02.14 |
申请人 |
INTEL CORPORATION |
发明人 |
MARCYK GERALD;CADIEN KEN |
分类号 |
B24B1/00;B24B37/04;B24B49/14;H01L21/3105;(IPC1-7):B24B1/00 |
主分类号 |
B24B1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|