发明名称 |
Electrically programmed MOS transistor source/drain series resistance |
摘要 |
High-speed MOS transistors are provided by forming a conductive layer embedded in transistor gate sidewall spacers. The embedded conductive layer is electrically insulated from the gate electrode and the source/drain regions of the transistor. The embedded conductive layer is positioned over the source/drain extensions and causes charge to accumulate in the source/drain extensions lowering the series resistance of the source/drain regions. |
申请公布号 |
US6727534(B1) |
申请公布日期 |
2004.04.27 |
申请号 |
US20010022847 |
申请日期 |
2001.12.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BULLER JAMES F.;XIANG QI;WRISTERS DERICK J. |
分类号 |
H01L21/8238;H01L21/336;H01L27/092;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/79;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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