发明名称 Method and system for reducing charge gain and charge loss when using an ARC layer in interlayer dielectric formation
摘要 A method and system for insulating a lower layer of a semiconductor device from an upper layer of the semiconductor device is disclosed. The method and system include providing an interlayer dielectric on the lower layer. The method and system further include providing an antireflective coating (ARC) layer. At least a portion of the ARC layer is on the interlayer dielectric. The method and system further include providing a plurality of via holes in the interlayer dielectric and the ARC layer and filling the plurality of via holes with a conductive material. The method and system further include removing the ARC layer while reducing subsequent undesirable charge gain and subsequent undesirable charge loss over the use of a chemical mechanical polish in removing the ARC layer.
申请公布号 US6727143(B1) 申请公布日期 2004.04.27
申请号 US20000533619 申请日期 2000.03.22
申请人 ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED;FUJITSU AND SEMICONDUCTOR LTD. 发明人 HUI ANGELA T.;RAMSBEY MARK T.;SUN YU;MATSUMOTO DAVID H.
分类号 H01L21/8242;H01L21/8247;H01L27/115;(IPC1-7):H01L21/824 主分类号 H01L21/8242
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