发明名称 |
Diamond pn junction diode and method for the fabrication thereof |
摘要 |
A diamond pn junction diode includes a p-type diamond thin-film layer formed on a substrate and an n-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer formed on a substrate and a p-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode includes the steps of forming a p-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n-type diamond thin-film layer by ion implantation of an impurity, or alternatively includes the steps of forming an n-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer a p-type diamond thin-film layer by ion implantation of an impurity.
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申请公布号 |
US6727171(B2) |
申请公布日期 |
2004.04.27 |
申请号 |
US20030368482 |
申请日期 |
2003.02.20 |
申请人 |
TAKEUCHI DAISUKE;WATANABE HIDEYUKI;OKUSHI HIDEYO;HASEGAWA MASATAKA;OGURA MASAHIKO;KOBAYASHI NAOTO;KAJIMURA KOJI;YAMANAKA SADANORI |
发明人 |
TAKEUCHI DAISUKE;WATANABE HIDEYUKI;OKUSHI HIDEYO;HASEGAWA MASATAKA;OGURA MASAHIKO;KOBAYASHI NAOTO;KAJIMURA KOJI;YAMANAKA SADANORI |
分类号 |
H01L21/04;H01L21/329;H01L29/16;H01L29/861;H01L31/10;H01L33/34;H01L33/40;H01S5/30;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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