发明名称 Current biased dual DBR grating semiconductor laser
摘要 A laser heterostructure having an active layer, a lateral waveguide terminating in an output aperture, and a gain section with a current drive electrode. A rear surface distributed Bragg grating with a tuning current electrode is formed on a surface of said laser heterostructure. The laser also includes a front surface distributed Bragg grating with a tuning current electrode on a surface of the laser heterostructure. The front surface distributed Bragg grating is closer to the output aperture than the rear surface distributed Bragg grating, There is a space between the rear surface distributed Bragg grating and the front surface distributed Bragg grating. A current drive electrode is formed on the space. Operation is best when the front surface distributed Bragg grating has adequate reflectivity at the Bragg wavelength with minimal scattering loss at other wavelengths, particularly at the wavelength of the rear surface Bragg grating.
申请公布号 US6728290(B1) 申请公布日期 2004.04.27
申请号 US20000660611 申请日期 2000.09.13
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS 发明人 COLEMAN JAMES J.;ROH S. DAVID
分类号 H01S3/08;H01S5/00;H01S5/0625;H01S5/12;H01S5/125;H01S5/22;(IPC1-7):H01S3/08;H01S3/10 主分类号 H01S3/08
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