| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for avoiding copper contamination in a via or a dual damascene structure. SOLUTION: In the process, interconnection metal is prevented from diffusing into material of a surrounding dielectric layer. Before metal interconnection is formed in an opening in a dielectric area, a lower metal surface is cleaned, and in this case the metal can be deposited on a sidewall of the opening. The deposited metal can be diffused into the dielectric layer, causing leakage current. To prevent the deposition of the metal on the sidewall, a barrier layer is deposited in the opening by being sputtered onto the sidewall before the step of cleaning the metal surface. COPYRIGHT: (C)2004,JPO
|
