| 摘要 |
PROBLEM TO BE SOLVED: To solve problems that the distortion of a high frequency output signal from a PIN diode is not reduced because the constitution is not made to hold the thickness of an i-layer of the PIN diode at sufficiently thick thickness and to hold the cross-sectional area of the PIN diode at an almost uniform value on any position between the p<SP>+</SP>-layer and an n<SP>+</SP>-layer is almost uniform, and a heterojunction epitaxial layer may be damaged by a high temperature annealing processing when ion junction is used for the formation of the PIN diode on a GaAs substrate constituting a heterojuniction FET or the like. SOLUTION: In the case of forming a PIN diode on a GaAs substrate constituting a compound semiconductor IC, An AlGaAs layer whose band gap is larger than that of a GaAs layer for the PIN diode is previously formed between an epitaxial layer for the IC and the GaAs substrate, and the GaAs layer for the PIN diode is formed just above the AlGaAs layer by selective epitaxial growth. COPYRIGHT: (C)2004,JPO
|
