| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film deposition method which can stably form thin films having performance, such as gas barrier properties, without variations and can impart flexibility to the thin films even when the thin films are formed on a number of substrates. SOLUTION: The thin film deposition method for forming the thin films consisting of oxide on the surfaces of the substrates by forming a gaseous mixture containing monomer gas and oxidative reaction gas to plasma comprises forming the gaseous mixture to the plasma while changing a supply rate ratio of the monomer gas to the reaction gas in such a manner that the supply flow rate ratio includes at least a specific range. At this time, the thin films can be deposited with the additionally decreased variations by using the deposition system 10 to which high-frequency electric power is supplied from one high-frequency power source section 30 for a plurality of deposition chambers 20. COPYRIGHT: (C)2004,JPO |
