Method and apparatus for leakage compensation with full Vcc pre-charge

摘要

A leakage compensation approach enabling full Vcc precharge. An array of memory cells is coupled between a pair of bit lines. A precharge circuit precharges the pair of bit lines to substantially a supply voltage level and a leakage compensation circuit supplies a first compensation current to a first one of the bit lines to substantially compensate for leakage current supplied by the first bit line during a memory access operation directed to one of the plurality of memory cells.