| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage element having a large capacitance in the storage element comprising a dielectric thin film and a solid electrolyte thin film between a pair of electrodes. SOLUTION: In the storage element comprising the pair of electrodes, the dielectric thin film and solid electrolyte thin film clamped between the electrodes; the dielectric thin film is composed of a metal oxide thin film such as a chromium oxide thin film, preferrably having a thickness of not less than 1 nm and not more than 100 nm, and obtained by sintering the oxide film at temperatures of not less than 400°C and not more than 800°C. The solid electrolyte thin film is obtained by sintering a compound containing silicon at temperatures of not less than 200°C. COPYRIGHT: (C)2004,JPO
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