| 摘要 |
PROBLEM TO BE SOLVED: To provide, at a low cost, a vertical organic transistor which can improve current density and operating speed and can also realize mass-production with good reproducibility. SOLUTION: In the vertical organic transistor in which at least a first electrode (drain electrode) 2, a first semiconductor layer 3, a comb or mesh second electrode (gate electrode) 4, a second semiconductor layer 5 and a third electrode (source electrode) 7 are sequentially provided on a substrate 1, the first semiconductor layer 3 is made of inorganic semiconductor material, and the second semiconductor layer 5 is made of an organic semiconductor material. The inorganic semiconductor material is, for example, a metal oxide having conductivity or semiconductor property. The organic semiconductor material is, for example, (1) acene molecule material of naphthalene or the like, (2) pigment of phthalocyanine system compound or the like, (3) low molecule compound of hydrazone compound or the like, or (4) polymer compound of poly-N-vinyl calbazole or the like. COPYRIGHT: (C)2004,JPO
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