| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of applying a gate voltage having no greater than the supply voltage of a control circuit, and less than five volts, between the gate and the source of an n-channel MOS gate device in an output section. SOLUTION: A resistor voltage dividing circuit 1a constituted of two resistors (R1, R2) and a constant voltage diode ZD1 is connected between the output of a control circuit 1 and the source of N1. The output voltage of the control circuit is divided by the resistors R1, R2, and the divided voltage is input into the gate of N1. With this, it becomes possible to input into the gate of N1 the gate voltage less than five volts. COPYRIGHT: (C)2004,JPO
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