| 摘要 |
PROBLEM TO BE SOLVED: To realize small power consumption and suppressing of unevenness of a switching magnetic field and an offset magnetic field of a TMR (tunneling magnetoresistive) element. SOLUTION: A magnetic memory includes first wiring 6, second wiring 24 crossing with the first wiring, a magnetoresistive effect element 2 provided on an intersection region of the first and the second sets of wiring and having a storage layer changing the direction of a magnetization in response to a current magnetic field generated by supplying current to the first and the second sets of wiring, and yokes 8, 22 magnetically coupled to at least one of the first and the second sets of wiring and having at least two soft magnetic layers laminated via a nonmagnetic layer. COPYRIGHT: (C)2004,JPO
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