发明名称 |
Hafnium nitride buffer layers for growth of GaN on silicon |
摘要 |
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 <custom-character file="US20040077165A1-20040422-P00900.TIF" wi="20" he="20" id="custom-character-00001"/>m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.
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申请公布号 |
US2004077165(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20030439952 |
申请日期 |
2003.05.16 |
申请人 |
ARMITAGE ROBERT D.;WEBER EICKE R. |
发明人 |
ARMITAGE ROBERT D.;WEBER EICKE R. |
分类号 |
C30B23/02;H01L21/20;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C30B23/02 |
代理机构 |
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