发明名称 |
Semiconductor device |
摘要 |
The present invention provides a semiconductor device including n-channel field effect transistors and p-channel field effect transistors all of which have excellent drain current characteristics. In a semiconductor device including an n-channel field effect transistor 10 and a p-channel field effect transistor 30, a stress control film 19 covering a gate electrode 15 of the n-channel field effect transistor 10 undergoes film stress mainly composed of tensile stress. A stress control film 39 covering a gate electrode 15 of the p-channel field effect transistor 30 undergoes film stress mainly caused by compression stress compared to the film 19 of the n-channel field effect transistor 10. Accordingly, drain current is expected to be improved in both the n-channel field effect transistor and the p-channel field effect transistor. Consequently, the characteristics can be generally improved.
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申请公布号 |
US2004075148(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20030433786 |
申请日期 |
2003.06.06 |
申请人 |
KUMAGAI YUKIHIRO;OHTA HIROYUKI;OOTSUKA FUMIO;IKEDA SHUJI;ONAI TAKAHIRO;MIURA HIDEO;ICHINOSE KATSUHIKO;TAKEDA TOSHIFUMI |
发明人 |
KUMAGAI YUKIHIRO;OHTA HIROYUKI;OOTSUKA FUMIO;IKEDA SHUJI;ONAI TAKAHIRO;MIURA HIDEO;ICHINOSE KATSUHIKO;TAKEDA TOSHIFUMI |
分类号 |
H01L21/28;H01L21/318;H01L21/768;H01L21/8238;H01L23/522;H01L27/092;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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