MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH REDUCED SWITCHING FIELD

摘要

A magnetoresistive tunneling junction memory cell (10) comprising a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferromagnetic region has a magnetic fringing field (96), an electrically insulating material positioned on the pinned ferromagnetic region to form a magnetoresistive tunneling junction (16), and a free ferromagnetic region (15) having a magnetic moment vector (53) oriented in a position parallel or anti-parallel to that of the pinned ferromagnetic region wherein the magnetic fringing field is chosen to obtain a desired switching field.