| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency plasma producing device and a producing method capable of uniforming film thickness in a substrate whose area is larger than that of the conventional device. <P>SOLUTION: A ground electrode 3 is arranged in a reaction container 1, and a discharge electrode 2 is disposed opposite to the ground electrode 3. A substrate 4 as a workpiece is installed close to the ground electrode 3. High frequency voltage is added to the discharge electrode 2, and plasma is produced between the ground electrode and the discharge electrode. An RF power source 15 produces first high frequency voltage and outputs produced voltage to a feeding point 9 arranged on one side of the discharge electrode 2. An RF power source 16 produces second high frequency voltage, and outputs produced voltage to a feeding point 9 arranged on the other side of the discharge electrode 2. A frequency of second high frequency voltage is equal to that of first high frequency voltage and a phase of voltage changes in accordance with a low frequency signal. The low frequency signal is modulated by a prescribed modulation signal. <P>COPYRIGHT: (C)2004,JPO |
