| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a circuit substrate of an interposer type which has small leakage current and large degree of freedoms of forming wirings and which is suitable for microminiaturization. <P>SOLUTION: A method for manufacturing the circuit substrate includes the steps of forming many recesses in an Si substrate, forming a thermal oxide film so as to cover the surface of the recesses, further filling the recesses with conductors, then flattening the recesses, further forming a multilayer wiring structure on the Si substrate, then grinding and etching a rear surface of the Si substrate, thereby exposing the conductors. <P>COPYRIGHT: (C)2004,JPO</p> |
