| 摘要 |
A plasma etching apparatus has a processing chamber in which a manufacturing process takes place, a monitoring window made of transparent material and disposed in one side of the chamber, and an optical end point detector that detects the end point of the process through the monitoring window. The monitoring window has a flute at an inner surface thereof facing the inside of the chamber. A heater supplies heat concentrated at the flute. The end point detector is optically aligned with the flute of the monitoring window. The geometry of the monitoring window, and the heat from the heater inhibit polymer created during the process within the chamber from depositing at the area of the window through which the process is observed by the end point detector, namely at the flute.
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