发明名称 |
Method for correcting a proximity effect, an exposure method, a manufacturing method of a semiconductor device and a proximity correction module |
摘要 |
A method for correcting a proximity effect applied to a dose of an electron beam exposure, includes classifying an underlying pattern of a level underlying a thin film layer; dividing a processing pattern to be transferred on the thin film layer into a first pattern overlapping with the underlying pattern and a second pattern which does not overlap with the underlying pattern according to the classified underlying pattern; calculating a pattern area density for the first and second patterns in a unit region; and calculating a corrected dose for the processing pattern according to the pattern area density.
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申请公布号 |
US2004075064(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20030602670 |
申请日期 |
2003.06.25 |
申请人 |
MAGOSHI SHUNKO;SATO SHINJI |
发明人 |
MAGOSHI SHUNKO;SATO SHINJI |
分类号 |
G03F7/20;G03F7/00;G03F9/00;H01J37/302;H01J37/304;H01J37/317;H01L21/027;(IPC1-7):H01J37/304 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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