| 摘要 |
A dual port memory cell is provided. The dual port memory cell includes a storage cell. A first bitline pair defining access to the storage cell by a first port and a second bitline pair defining access to the storage cell by a second port are defined. Each bitline of the first and second bitline pairs is defined from metallization line features, and the first bitline pair is defined on one side of the storage cell and the second bitline pair is defined on the other side of the storage cell. The bitlines of the first port are physically separate from the bitlines of the second port. |
